F I B ( Focused Ion Beam )
LEO 의 우수한 SEM 기술력이 3년여에 걸친 개발 및 TEST 과정을 거쳐 FIB ( Focused Ion Beam ) 장비를 시장에 내 놓았습니다. 기존에 많은 Customer 들로부터 사랑을 받고 있는 세계 최고의 Beam 안정성과 분해능을 갖고 있는 GEMINI Column 과 더불어 Dual Beam 형태를 갖추고 있습니다. 따라서 Field Emission SEM Image 및 Ion Image를 동시에 보실 수가 있습니다. 또한 VP mode 에서의 SE Image 도 관찰하실 수가 있습니다. 8" Wafer를 Loading 할 수 있는 1560XB model 과 보다 작은 Sample을 위한 1540XB model 이 현재 개발 시판되고 있으며, 300mm Wafer 용 model도 개발 중입니다.
System Features :
Ultra-high resolution imaging and structure analysis of wafers, wafer pieces
and cross-sections.
Gas injection system with multiple injectors and high precision stage for accurate
positioning.
Image interlacing allows review etch progress using the electron beam image.
Short cross beam point of 7.5 mm (electrons) and 12 mm (ions) allows optimum
performance from both columns with no compromises.
Tool to Tool compatibility available for wafer defect navigation.
Infra-red CCD chamber cameras for safe specimen insertion and navigation.
Additional accessory ports for EDS and SIMS detectors.
Electron Optical Features
:
Ultra-high performance with resolution 1 nm at 20 kV, 2.3 nm at 1 kV.
In-lens annular detector for surface specific secondary electron imaging
and superb image quality at all operating voltages.
High probe current and stability better than 0.5% per hour for noise free imaging
and fast EDS analysis.
Wide operating voltage range from 0.1 to 30 kV with minimal readjustment
required.
FIB Features :
UHV type with Gallium liquid metal ion source.
High resolution performance resolution 7 nm guaranted, 5 nm achievable.
Excellent probe current range from 1 pA for high resolution imaging to 50 nA
for fast milling rates.
Fine probe current adjustment available via condenser lens.
Seven mechanical aperture positions with high precision motorised adjustment.
less than 15 seconds for change between adjacent apertures.
Gas Injection Features
:
Multiple injector needle system for up to 5 different gases ( one per
needle ).
Gas reservoirs held within a vacuum chamber.
Enhanced or selective etch - e.g. Chlorine, Xenon Difluoride.
Metal or insulator deposition - e.g. Tungsten, Silicon Dioxide.
Deposition by ion or electron beam.
Motorised XYZ micro stage for accurate needle positioning.
Gas injection and needle positioning fully software controlled.
주요 Application
Semiconductor Failure Analysis
Semiconductor Process Monitoring and Diagnostics
Nanotechnology
Device Modification
TEM Specimen Preparation
FIB Application 관련 Presentation