HTSKOREA 홈페이지에 오신걸 환영합니다!

business news
NSOM 관련

Microelectronics, Semiconductors, Optical Storages

	Semi01: Near-Field Optical Recording of Photochromic Materials Using Bent Cantilever Fiber Probes Authors : Jeongyong KIM, Ki-Bong SONG, Kang-Ho PARK, Hyo Won LEE and Eunkyoung KIM Near-.eld optical recording of photochromic materials is carried out using a scanning near-field optical microscope (SNOM). We constructed a simpli.ed yet fully functional SNOM by installing bent cantilever .ber probes in an atomic force microscope. Photochromic diarylethene .lms are used as re-writable near-.eld recording media, and we successfully record erasable recording marks having a minimum of 600 nm width in a writing time as short as 30 ms. semi01.pdf(496.2KB)
	Semi02 : IMAGING P-N JUNCTIONS BY SCANNING NEAR-FIELD OPTICAL, ATOMIC FORCE AND ELECTRICAL CONTRAST MICROSCOPY Authors : Grazia Tallarida, Laboratorio MDM-INF, Italy. In this work, results on local electrical characterisation of pn junctions, based on scanning probe microscopy are presented. These results are part of the experimental work achieved during the visit at Nanonics Imaging Ltd in Jerusalem, where near field optical techniques are being integrated with local electrical characterisation of materials. The results are compared with those obtained on similar samples using the Electric Force Microscopy. semi02.PDF(217KB)
	Semi03 : Failure Analysis of Integrated Circuits Beyond the Diffraction Limit: Contact Mode Near-Field Scanning Optical Microscopy with Integrated Resistance, Capacitance, and UV Confocal Imaging Authors : Aaron Lewis et al. Super resolution reflection near-field scanning optical microscopy (NSOM) of ultra-large-scale integrated circuits (ULSI) that have been subjected to chemical mechanical polishing (CMP) are presented. These NSOM images are rich in contrast, unlike simultaneously recorded atomic force microscopy (AFM) images. The NSOM data are compared to reflection confocal far-field optical microscopy using ultraviolet radiation with a wavelength of 248 nm, which has a resolution close to 0.2 um. Even though there is a significant thickness of oxide between the tip and the layer being imaged, the data recorded with visible light clearly exhibits higher resolution that those ultraviolet confocal images that have undergone computer deconvolution. The AFM images exhibit no topography representing circuit features because the CMP operation that these static random access memory chips (SRAMs) have been subjected to produces flat topographic free surfaces. In terms of NSOM imaging, this is most interesting since the contribution of topography is totally removed and index of refraction variations are the only source for these rich NSOM images. Clearly, these NSOM images with cantilevered NSOM elements are free from topographic artifaces. Furthermore, simultaneous imaging of NSOM, normal force topography, and funtional electrical characteristics such as capacitance and resistance are presented on these SRAMs. This demonstrates the ability of NSOM to act as a tool that provocatively integrates the best of far-field, optical imaging on the one hand with the most advanced scanned prove electrical imaging of circuit function on the other. semi03.pdf(10.1MB)
	Semi04 : Near-field optical photomask repair with a femtosecond laser We present a high resolution near-field optical designed for repair of opaque defects in binary photomasks. Both instrument design and near-field imaging and patterning results will be presented. Designed for ablative processing of thin metal films, the MR-100 incorporates an industrial amplified femtosecond laser, third harmonic generator and built-in autocorrelator. The ultrashort duration of the femtosecond pulses enables the tool to remove chrome layers with negligible damage to the surrounding metal or the underlying quartz substrate. The micropipette based near-field writing head can deliver power densities of hundreds of GW/cm2 to spots of several hundred nanometers and below. Repairs on sample masks will be presented and the repair quality will be discussed. semi04.pdf(326.7KB)
	Semi05 : Transparently combining SEM, TEM and FIBs with AFM/SPM and NSOM semi05.pdf(751.3KB)
	Semi06 : Near-field Scanning Optical, Atomic Force, Scanning Resistance and uv Confocal Microscopy in the Failure Analysis of ULSIs Produced with the Most Advanced Sub-Quarter Micron Design Rules Authors : Aaron Lewis et al., Division of Applied Physics, The Hebrew University of Jerusalem, Israel. Dimitry Veinger, Intel Corp., Haifa, Israel. Reflection near-field scanning optical microscopy (NSOM) images are presented of static random access memory chips which have undergone a chemical mechanical polishing operation. These images are compared to atomic force microscopy images on the one hand and these images show no topography on these essentially flat samples. The images are also compared to deep UV confocal microscope images at 248 nm and the associated NSOM scan clearly shows considerably higher feature definition and resolution. In addition, it is shown that the same NSOM / AFM cantilevered optical fiber can be used to record an image of the resistivity of the titanium salicide layer of this chip. Finally, it is demonstrated that unique new force sensing probes can be designed for chip failure analysis and inspection using the methodologies that have been refined for producing near-field optical probes. semi06 .pdf(146.5KB)
	Semi07 : Fountain pen nanochemistry: Atomic force control of chrome etching In this report we demonstrate a general method for affecting chemical reactions with a high degree of spatial control that has potentially wide applicability in science and technology. Our technique is based on complexing the delivery of liquid or gaseous materials through a cantilevered micropipette with an atomic force microscope that is totally integrated into a conventional optical microscope. Controlled etching of chrome is demonstrated without detectable effects on the underlying glass substrate. This simple combination allows for the nanometric spatial control of the whole world of chemical reactions in defined regions of surfaces. Applications of the technique in critical areas such as mask repair are likely. semi07.pdf(74.4KB)
	Semi08 : Investigating material and functional properties of static random access memories using cantilevered glass multiple-wire force-sensing thermal probes Authors : Rimma Dekhter et al. A double-wire cantilevered glass probe has been produced for scanned probe microthermal, resistivity, and topographic measurements. The structure has many potentially unique properties for scanned probe microscopy and other nanotechnological measurements. In this letter, a double Pt wire probe was fused at the tip and applied to thermal resistive measurements. The probe operation is based on the linear dependence of Pt resistance on temperature. Most microscopic structures are composed of a variety of materials. In the present study, the features of a static random access memory chip are investigated. Such memory chips are composed of materials such as dielectrics, metals, and semiconductors. We demonstrate that these samples, which are prepared using a chemical?mechanical polishing procedure and have essentially no surface topography, can be inspected using the thermal conductivity, resistivity, and topographic sensitivity of these probes. semi08.pdf(83.9KB)